Growth of Epitaxial Layers of the Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> Solid Solution from a Tin Solution-Melt
A. Sh. RazzokovUrgench State University
ABI
Abstract
Mono-crystal films of a graded-gap solid solution Si 1-x-y Ge x Sn y on Si <111>substrates were grown by liquid-phase epitaxy from a limited tin solution-melt in the temperature range 500–1100 °C. The chemical composition of the grown epitaxial films was determined using a scanning electron microscope.
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