International Journal of Mathematics and Physics
4 works
Journal · ISSN 2218-7987
STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD
A. Sh. Razzokov, Khushnudbek Eshchanov, А. С. Саидов
ArticleAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics20250 citationsABI