Skip to main content
AkademIndex

Products

For developers

AkademBasesoonOpen API for the ecosystem
Latin
English

A. Yu. Leĭderman

45 works

Starodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, Uzbekistan

  1. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 citations
    ABI

  2. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19878 citations
    ABI

  3. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    ArticleNear-Field Optical MicroscopyPhysics of the Solid State20147 citations
    ABI

  4. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 citations
    ABI

  5. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 citations
    ABI

  6. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19766 citations
    ABI

  7. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 citations
    ABI

  8. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20165 citations
    ABI

  9. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (b)19685 citations
    ABI

  10. Recombination in semiconductors with deep impurities

    A. Yu. Leĭderman, V. G. Stel’makh, М. Ф. Садыков

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20084 citations
    ABI

  11. Study of properties of tellurium-doped indium phosphide as photoconversion material

    A. Yu. Leĭderman, А. С. Саидов, M. M. Khashaev +1

    ArticlePhase-change materials and chalcogenidesApplied Solar Energy20144 citations
    ABI

  12. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    ArticleMaterial Science and ThermodynamicsApplied Solar Energy20164 citations
    ABI

  13. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20084 citations
    ABI

  14. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19793 citations
    ABI

  15. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19793 citations
    ABI

  16. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    ArticleSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 citations
    ABI

  17. Thermovoltaic processes in gallium arsenide doped with tin

    A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20123 citations
    ABI

  18. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    ArticleMaterial Science and ThermodynamicsApplied Solar Energy20172 citations
    ABI

  19. Effective solar cells based on high-resistance monocrystalline silicon

    М. Н. Турсунов, A. Yu. Leĭderman, S. Dadamukhamedov +3

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20072 citations
    ABI

  20. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20091 citations
    ABI

  21. The effect of impurity spectrum tailing on photocell characteristics

    A. Yu. Leĭderman

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20101 citations
    ABI

  22. The nature of thermovoltaic currents and voltages observed for the polycrystalline silicon synthesized by means of five-time melting of engineering silicon in a solar furnace

    А. С. Саидов, A. Yu. Leĭderman, Sh. T. Manshurov

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20111 citations
    ABI

  23. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20201 citations
    ABI

  24. Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method

    A. Yu. Leĭderman, M. M. Khashaev

    ArticleOptical and Acousto-Optic TechnologiesApplied Solar Energy20131 citations
    ABI

  25. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20031 citations
    ABI