Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference
A. Yu. LeĭdermanPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanА. С. СаидовPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. B. KarshievPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The thermoelectric effect, i.e., appearance of thermally stimulated current and voltage during uniform heating in a temperature range from 30 to 250°C, is studied. It is shown that greatest values of the current and voltage appear when maximum band gap difference is observed.