Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x
Sh. N. UsmonovStarodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, UzbekistanА. С. СаидовStarodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, UzbekistanA. Yu. LeĭdermanStarodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, Uzbekistan
ABI
Abstract
The current-voltage characteristics of n-Si-p-(Si2)1 − x − y (Ge2) x (GaAs) y (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94), p-Si-n-(Si2)1 − x (CdS) x (0 ≤ x ≤ 0.01), n-GaAs-p-(InSb)1 − x (Sn2) x (0 ≤ x ≤ 0.05), and n-CdS-p-CdTe heterostructures have been studied. It has been found that the current-voltage characteristics of these structures contain a portion of sublinear increase in the current with a voltage V ≈ V 0exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear portion of the current-voltage characteristic have been estimated. The experimental results have been explained based on the theory of the injection depletion effect.
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