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Works cited by this work

13 works

Work: Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

  1. Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions

    M. K. Herndon, Anju Gupta, V. Kaydanov +1

    Article199916 citations
    ABI

  2. Double-injection currents in semiconductors

    É. I. Adirovich, P. M. Karageorgii-Alkalaev, A. Iu. Leiderman

    Article197814 citations
    ABI

  3. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleMaterial Science and ThermodynamicsSemiconductors200913 citations
    ABI

  4. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Article197812 citations
    ABI

  5. Optical Energy Gap of the Mixed Crystal CdS<sub><i>x</i></sub>Te<sub>1-<i>x</i></sub>

    Keiichi Ohata, Junji Saraie, Tetsuro Tanaka

    Article197310 citations
    ABI

  6. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20109 citations
    ABI

  7. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20108 citations
    ABI

  8. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    ArticleAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 citations
    ABI

  9. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    ArticleSemiconductor materials and interfacesSemiconductors20098 citations
    ABI

  10. FUNDAMENTAL AND APPLIED PROBLEMS OF PHYSICS

    В. Г. Халтурин

    Article20067 citations
    ABI

  11. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19766 citations
    ABI

  12. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    ArticleSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 citations
    ABI

  13. Current-voltage characteristic of n-p-p + structures based on a chromium-compensated silicon-germanium solid solution

    A.S. Saidov, A. Yu. Leĭderman, Б. Сапаев +2

    Article19962 citations
    ABI