Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature
Sh. N. UsmonovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanШ. А. МирсагатовStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanA. Yu. LeydermanStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, Uzbekistan
ABI
Abstract
Current-voltage characteristics of the n-CdS/p-CdTe heterostructure are studied at different temperatures. It is established that the forward portion of the current-voltage characteristic of these structures at low voltages (as high as 0.5 V) is described by the exponential dependence, while at high voltages (as high as 2.6 V), there is a portion of sublinear growth of the current with voltage. Experimental results are interpreted based on the theory of the effect of injection depletion. It is shown that the product of mobility of majority carriers by the concentration of deep centers increases as the temperature is increased.
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