I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
А. С. СаидовStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanA. Yu. LeydermanStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanSh. N. UsmonovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanKhomidkhodzha KholikovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan
ABI
Abstract
The I–V characteristics of the p-Si-n-(Si2) 1 − x (CdS) x (0 ≤ x ≤ 0.01) structures are investigated at various temperatures. It is found that the I–V characteristic of such structures has a sublinear portion of the current growth with voltage V ≈ V 0exp(JaW). The experimental results can be explained on the basis of the theory of the injection depletion effect. It is shown that the mobility of the minority carrier (hole) decreases with an increasing temperature.
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