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Works citing this work

13 works

Work: I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

  1. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    ArticleSemiconductor materials and interfacesPhysics of the Solid State20158 citations
    ABI

  2. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    ArticleNear-Field Optical MicroscopyPhysics of the Solid State20147 citations
    ABI

  3. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 citations
    ABI

  4. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

    Ш. А. Мирсагатов, I. B. Sapaev

    ArticleSemiconductor materials and interfacesInorganic Materials20145 citations
    ABI

  5. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

    I. B. Sapaev

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductor Physics Quantum Electronics & Optoelectronics20195 citations
    ABI

  6. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20144 citations
    ABI

  7. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

    S.Z. Zaynabidinov, Kh. M. Madaminov

    ArticleIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20202 citations
    ABI

  8. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

    Kh. M. Madaminov

    ArticleSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20211 citations
    ABI

  9. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    ArticleAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20231 citations
    ABI

  10. Determining certain physical settings of photocells

    A. Yu. Leyderman

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20110 citations
    ABI

  11. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 citations
    ABI

  12. Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

    I.B. Sapaev, Б. Сапаев, D. Babajanov

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 citations
    ABI

  13. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 citations
    ABI