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Работы, цитирующие эту работу

Работ: 13

Работа: I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

  1. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  2. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  3. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6
    ABI

  4. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesInorganic Materials2014Цитирований: 5
    ABI

  5. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

    I. B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductor Physics Quantum Electronics & Optoelectronics2019Цитирований: 5
    ABI

  6. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2014Цитирований: 4
    ABI

  7. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

    S.Z. Zaynabidinov, Kh. M. Madaminov

    СтатьяIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2020Цитирований: 2
    ABI

  8. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

    Kh. M. Madaminov

    СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2021Цитирований: 1
    ABI

  9. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 1
    ABI

  10. Determining certain physical settings of photocells

    A. Yu. Leyderman

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2011Цитирований: 0
    ABI

  11. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  12. Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

    I.B. Sapaev, Б. Сапаев, D. Babajanov

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  13. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI