Статья

Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

I.B. Sapaev“Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, UzbekistanБ. СапаевTashkent State Agrarian University, Tashkent, UzbekistanD. BabajanovTashkent State University of Economics, Tashkent, Uzbekistan

E3S Web of Conferencesjournal2023en

ABI

Аннотация

Heterojunction between Si and CdSxTe1-x have been obtained by vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdS x Te 1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdS x Te 1-x solid solution at the interface of the n/Si − n/ CdS x Te 1-x heterostructure are calculated.

Темы

Chalcogenide Semiconductor Thin Films Advanced Semiconductor Detectors and Materials Crystal Structures and Properties

Идентификаторы

DOI: 10.1051/e3sconf/202340103075

Цитирования и источники

Цитирований: 0Использованных источников: 9

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