The effect of impurity spectrum tailing on photocell characteristics
A. Yu. LeĭdermanScientific Production Association “Physics-Sun”, Academy of Sciences of Uzbekistan Applied Physics Institute, Tashkent, Uzbekistan
ABI
Abstract
We present the results of calculating photocell operation under conditions when its material is characterized by an extremely high concentration of deep impurity centers; this is why their energy spectrum is not discrete, but diffused and quasi-continuous. We show that such impurity centers greatly decrease the injection modulation of photocell base resistance, but this influences photocell characteristics insignificantly.
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