Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors
P. M. Karageorgy‐AlkalaevInstitute of Technical Physics, Academy of Sciences of Uzbek SSR, TashkentA. Yu. LeĭdermanInstitute of Technical Physics, Academy of Sciences of Uzbek SSR, Tashkent
ABI
Abstract
Abstract Recombination statistics for semiconductors are derived taking into account transitions between impurities forming spatially localized recombination pairs. Expressions for the recombination rate and lifetime are given. The cases of weak and strong deviations from the thermodynamic equilibrium are studied.