Thermovoltaic properties of technical silicon melted by solar radiation
А. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. A. AbakumovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKhomidkhodzha KholikovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The thermovoltaic characteristics of the p-n junction fabricated on the basis of technical silicon melted by means of solar radiation have been measured. The thermovoltaic effect that becomes apparent at temperatures T ≥ 60°C has been detected. This effect is evidently associated with the thermal generation of electron-hole pairs with the participation of impurities and surface states of intergrain boundaries.
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