Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures
М. С. СаидовPhysicotechnical Institute, “Scientific Production Association “Fizika-Solntse”, Academy of Sciences of Uzbekistan, Bukara, UzbekistanA.S. SaidovPhysicotechnical Institute, “Scientific Production Association “Fizika-Solntse”, Academy of Sciences of Uzbekistan, Bukara, UzbekistanSh. N. UsmonovPhysicotechnical Institute, “Scientific Production Association “Fizika-Solntse”, Academy of Sciences of Uzbekistan, Bukara, UzbekistanK. A. AmonovPhysicotechnical Institute, “Scientific Production Association “Fizika-Solntse”, Academy of Sciences of Uzbekistan, Bukara, Uzbekistan
ABI
Abstract
The pSi-n(Si2)1−x (ZnS) x (0 ≤ x ≤ 0.92) structure, on which thermovoltaic effect is observed, has been obtained by means of liquid-phase epitaxy from tin solution-melt on plates of p-type technical silicon. This effect is explained by grain boundary defects and influence of ZnS impurities in a thin layer adjacent to the p-n-junction.
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