Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots
А. С. СаидовPhysics–Sun Scientific and Production Association, Institute of Physics and Technology, Uzbekistan Academy of Sciences, Tashkent, 100084, UzbekistanSh. N. UsmonovPhysics–Sun Scientific and Production Association, Institute of Physics and Technology, Uzbekistan Academy of Sciences, Tashkent, 100084, UzbekistanK. A. AmonovPhysics–Sun Scientific and Production Association, Institute of Physics and Technology, Uzbekistan Academy of Sciences, Tashkent, 100084, UzbekistanМ. С. СаидовPhysics–Sun Scientific and Production Association, Institute of Physics and Technology, Uzbekistan Academy of Sciences, Tashkent, 100084, UzbekistanB. R. KutlimuratovIslam Karimov State Technical University, Tashkent, 100095, Uzbekistan
ABI
Abstract
The spectral dependences of photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures and structural features of epitaxial film of (Si2)1–x–y(Ge2) x (ZnSe) y solid solution were studied by atomic force microscopy. The peaks of sensitivity at photon energies of 1.60, 1.85, 2.40, and 2.54 eV due to ZnSe and Ge quantum dots in the solid solution layer were revealed.