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Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

У. И. ЭркабоевNamangan Institute of Engineering and Technology, Namangan, UzbekistanR. G. RakhimovNamangan Institute of Engineering and Technology, Namangan, Uzbekistan
ABI

Abstract

In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism has been developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential) at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a non-parabolic dispersion law are investigated. The proposed theory investigated the results of experiments of a narrow-band quantum well (InxGa1-xSb).

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