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T. Nazarov
1 works
Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)
The influence of structural defects of Si on height of potential barrier Mo - Si
T. Nazarov
Article
Semiconductor materials and interfaces
1995
0 citations
ABI
ABI:AkademIndex/openalex/1995.article.000172