U.I. Ushakov

1 works

RAS - Ioffe Physico Technical Institute

1. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000109