Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem

W. V. Lundin

7 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19970 citations
    ABI

  2. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations
    ABI

  3. Electrical and Optical Properties of Highly Strained GaN Epilayers

    A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

    ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations
    ABI

  4. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations
    ABI

  5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
    ABI

  6. Photoinduced self-organization of gallium nanowires on a GaN surface

    D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
    ABI

  7. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

    A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
    ABI