V. V. Tret’yakov

2 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19991 citations

   ABIABI:AkademIndex/openalex/2026.other.522142

2. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations

   ABIABI:AkademIndex/openalex/1999.article.000218