A. V. Sakharov

11 works

A.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

   V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

   ArticleGaN-based semiconductor devices and materialsMaterials science forum19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000045

2. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

   A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

   ArticleStrong Light-Matter InteractionsTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000056

3. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000098

4. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

   М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

   ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000110

5. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

   Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000137

6. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

   Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000065

7. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000109

8. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000117

9. Electrical and Optical Properties of Highly Strained GaN Epilayers

   A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

   ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000191

10. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations

    ABIABI:AkademIndex/openalex/1998.article.000219

11. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations

    ABIABI:AkademIndex/openalex/1999.article.000100