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V. V. Emtsev

13 works

Ioffe Physicotechnical Institute, RAS, 194021 St. Petersburg, Russia

  1. Elementally specific electron–positron annihilation radiation emitted from ion cores of group-V impurity–vacancy complexes in germanium

    N.Yu. Arutyunov, V. V. Emtsev

    ArticleMuon and positron interactions and applicationsPhysica B Condensed Matter20071 citations
    ABI

  2. Positron annihilation on defects in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

    ArticleMuon and positron interactions and applicationsJournal of Physics Condensed Matter20121 citations
    ABI

  3. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

    ArticleMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 citations
    ABI

  4. A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation

    N.Yu. Arutyunov, V. V. Emtsev, K. Schmalz +1

    ArticleMuon and positron interactions and applicationsphysica status solidi (a)19901 citations
    ABI

  5. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

    ArticleMuon and positron interactions and applicationsActa Materialia20141 citations
    ABI

  6. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

    ArticleMuon and positron interactions and applicationsJournal of Physics Conference Series20151 citations
    ABI

  7. Positron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +3

    ArticleMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20161 citations
    ABI

  8. Positron probing of disordered regions in neutron‐irradiated silicon

    N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

    ArticleMuon and positron interactions and applicationsphysica status solidi (b)20161 citations
    ABI

  9. Formation of Thermal Donors in Czochralski Grown Silicon Under Hydrostatic Pressure Up to 1 GPa

    V. V. Emtsev, B. A. Andreev, A. Misiuk +1

    ChapterAdvanced Materials Characterization Techniques19960 citations
    ABI

  10. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    ArticleGaN-based semiconductor devices and materialsMaterials science forum19970 citations
    ABI

  11. Positron annihilation in AlN and GaN

    N.Yu. Arutyunov, V. V. Emtsev, A.V. Mikhailin +1

    ArticleMuon and positron interactions and applicationsPhysica B Condensed Matter20010 citations
    ABI

  12. Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data

    N.Yu. Arutyunov, V. V. Emtsev, A.V. Mikhailin +1

    ArticleMuon and positron interactions and applicationsPhysica B Condensed Matter20030 citations
    ABI

  13. Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion

    N.Yu. Arutyunov, V. V. Emtsev

    ArticleMuon and positron interactions and applicationsPhysica B Condensed Matter20090 citations
    ABI