A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation
N.Yu. ArutyunovInstitute for Electronics, Academy of Sciences of the Uzbek SSR, TashkentV. V. EmtsevA. F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, LeningradK. SchmalzInstitute of Semiconductor Physics, Academy of Sciences, Frankfurt (Oder)V. Yu. TrashchakovInstitute for Electronics, Academy of Sciences of the Uzbek SSR, Tashkent
ABI
Abstract
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