Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion
N.Yu. ArutyunovInstitute of Electronics, UAS, 700170 Tashkent, UzbekistanV. V. EmtsevIoffe Physicotechnical Institute, RAS, 194021 St. Petersburg, Russia
ABI
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