Chapter

Formation of Thermal Donors in Czochralski Grown Silicon Under Hydrostatic Pressure Up to 1 GPa

V. V. EmtsevIoffe Physicotechnical Institute, RAS, 194021, St.Petersburg, RussiaB. A. AndreevInstitute of Chemistry of High-Purity Substance, RAS, 49 Tropinin St., GSP-445, 603600, Nizhnyi Novgorod, RussiaA. MisiukInstitute of Electron Technology, S8, Al.Lotników 32/46, 02-668, Warsaw, PolandK. SchmalzInstitute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230, Frankfurt(Oder), Germany

1996en

ABI

Abstract

No abstract available.

Topics

Advanced Materials Characterization Techniques High-pressure geophysics and materials Diamond and Carbon-based Materials Research

Identifiers

DOI: 10.1007/978-94-009-0355-5_21

Citations and references

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