Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement
I. L. KrestnikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgМ. В. МаксимовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. SakharovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgSergei IvanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. V. SorokinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgL.N. TenishevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,Zh. I. AlfërovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
It is shown that in order to achieve lasing in structures with CdSe submonolayers inserted in a ZnSe matrix, no additional optical confinement of the active region using thick wide-gap layers is required. The high oscillator strength of the excitons trapped at CdSe islands modulates the permittivity and thus produces a natural exciton-induced waveguiding effect.
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