Zh. I. Alfërov

10 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000098

2. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

   М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

   ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000110

3. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

   Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000137

4. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

   V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000030

5. Fabrication of InAs quantum dots on silicon

   G. É. Cirlin, V. N. Petrov, В. Г. Дубровский +6

   ArticleSurface and Thin Film PhenomenaTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000052

6. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

   Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000065

7. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000117

8. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

   L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000171

9. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

   J. Holst, M. Straßburg, N. N. Ledentsov +13

   ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000219

10. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    ArticleLaser-Matter Interactions and ApplicationsMaterials science forum19980 citations

    ABIABI:AkademIndex/openalex/1998.article.000279