Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem

P. S. Kop’ev

17 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

  1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 citations
    ABI

  2. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

    V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19991 citations
    ABI

  3. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

    R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

    ArticleAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19930 citations
    ABI

  4. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

    A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

    ArticleStrong Light-Matter InteractionsTechnical Physics Letters19970 citations
    ABI

  5. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

    I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
    ABI

  6. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19970 citations
    ABI

  7. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
    ABI

  8. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  9. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  10. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

    A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  11. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  12. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

    V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19980 citations
    ABI

  13. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  14. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    ArticleLaser-Matter Interactions and ApplicationsMaterials science forum19980 citations
    ABI

  15. Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

    L. Ya. Karachinskiĭ, A. M. Georgievskii, N. A. Pikhtin +3

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 citations
    ABI

  16. Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition

    M. V. Muzafarova, Ivan V. Ilyin, E. N. Mokhov +7

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 citations
    ABI

  17. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

    Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 citations
    ABI