Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions
K. D. MoiseevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. Ya. MeltserA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,В. А. СоловьевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,Sergei IvanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhailovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
ABI
Abstract
The electroluminescent properties of quantum-well diode structures on staggered type-II heterojunctions in the InAs/GaSb system, obtained by molecular-beam epitaxy on InAs substrates, are investigated. Electroluminescence is observed in the spectral range 3–4 μm at T=77 K. It is found that emission bands due to recombination transitions involving electrons from the size-quantization levels of both the self-matched quantum wells at the InAs/GaSb type-II heterojunction and of the square quantum wells in short-period superlattices.
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