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Yu. P. Yakovlev

21 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

  1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 citations
    ABI

  2. 3.3-μm LEDs for measuring methane

    А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

    ArticleSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 citations
    ABI

  3. Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 citations
    ABI

  4. Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure

    K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
    ABI

  5. Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

    K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 citations
    ABI

  6. 1.94-μm light-emitting diodes for moisture-content measurements

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    ArticleSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 citations
    ABI

  7. Power characteristics of 2.2 μm LEDs for spectroscopic applications

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    ArticleSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 citations
    ABI

  8. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

    В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2

    ArticleSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 citations
    ABI

  9. 2.2 μm cw single-mode diode lasers with thermoelectric cooling

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    ArticleSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 citations
    ABI

  10. Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure

    E. A. Grebenshchikova, O. G. Ershov, B. E. Zhurtanov +3

    ArticleSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 citations
    ABI

  11. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

    T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
    ABI

  12. InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

    А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

    ArticleAtmospheric and Environmental Gas DynamicsTechnical Physics Letters19980 citations
    ABI

  13. 2.35 μm LEDs for measuring methane

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    ArticleSpectroscopy and Laser ApplicationsTechnical Physics Letters19980 citations
    ABI

  14. Growth of InAs photodiode structures from metalorganic compounds

    S. S. Kizhaev, M. P. Mikhaĭlova, C. C. Molchanov +2

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations
    ABI

  15. Formation of optoelectronic structures based on InAsSb/InAsSbP solid solutions

    E. A. Grebenshchikova, A. M. Litvak, V. V. Sherstnev +1

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations
    ABI

  16. Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

    T. N. Danilova, O. I. Evseenko, A. N. Imenkov +4

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations
    ABI

  17. Mechanisms of photocurrent amplification in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures

    S. V. Slobodchikov, Х. М. Салихов, Yu. P. Yakovlev +1

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  18. AlGaAsSb lasers emitting in the 1.6 μm region

    T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov +2

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 citations
    ABI

  19. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

    V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

    ArticleSemiconductor Quantum Structures and DevicesCrystal Research and Technology20020 citations
    ABI

  20. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

    V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

    ArticleAdvanced Semiconductor Detectors and MaterialsCrystal Research and Technology20020 citations
    ABI

  21. Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure

    L. I. Burov, A. S. Gorbatsevich, M. Jadan +2

    ArticleSemiconductor Quantum Structures and DevicesJournal of Applied Spectroscopy20110 citations
    ABI