Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers
T. N. DanilovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgO. I. EvseenkoA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. N. ImenkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. M. KolchanovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. V. StepanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. SherstnevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
An investigation was made of continuous tuning of the emission wavelength in two types of InAsSb/InAsSbP diode heterolasers: three-layer structures with combined electrical and optical confinement and five-layer structures with separate confinement. In three-layer structures the emission wavelength initially decreases by 2–4 Å with increasing current and then increases by 10–15 Å. In five-layer structures the emission wavelength mainly decreases. This difference is attributed to the better flow of carriers in the bulk of the active region in five-layer structures as compared with three-layer ones.
Topics
Identifiers
Citations and references
Cited by 01 references