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Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

K. D. MoiseevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhaiovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgO. G. ErshovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
Technical Physics Lettersjournal1997en
ABI

Abstract

Laser structures based on broken-gap type II p-GaInAsSb/n-InGaAsSb heterojunctions in the active region are proposed and studied. Lasing at 3.2–3.4 μm has been obtained in the temperature range 77–195 K with a threshold current density of 400 A/cm2 at 77 K and a characteristic temperature T0=47 K.

Topics

Advanced Semiconductor Detectors and MaterialsSemiconductor Quantum Structures and DevicesAdvanced Optical Sensing Technologies

Identifiers

DOI
10.1134/1.1261568

Citations and references

Cited by 01 references
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