Article

Growth of InAs photodiode structures from metalorganic compounds

S. S. KizhaevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhaĭlovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgC. C. MolchanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. D. StoyanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1998en

ABI

Abstract

InAs layers were grown on p-InAs substrates by epitaxy from metalorganic compounds. Photodiodes were fabricated using the p-n junctions obtained. The current-voltage, capacitance-voltage, and spectral characteristics of the photodiode structures were investigated.

Topics

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Machine Learning in Materials Science

Identifiers

DOI: 10.1134/1.1262072

Citations and references

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