Formation of optoelectronic structures based on InAsSb/InAsSbP solid solutions
E. A. GrebenshchikovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. M. LitvakA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. SherstnevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
An etchant having the composition HCl/CrO3 /HF/H2O is proposed for fabricating optoelectronic devices (lasers, light-emitting diodes, and photodiodes) based on InAs solid solutions for the 3–5 μm spectral range. It is shown that the proposed etchant ensures isotropic rates of etching of InAs and GaInAsSb, InAsSPbP, and InAsSb solid solutions of varying composition. An example is given of the use of this etchant to produce high-power light-emitting diodes for the 3.3 μm spectral range.
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