Mechanisms of photocurrent amplification in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures
S. V. SlobodchikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgХ. М. СалиховA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. E. SamorukovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
Measurements of the current-voltage characteristics, the photocurrent, and its dependence of the latter on the bias voltage (forward and reverse) and the magnetic field were used to determine the current transport mechanisms in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures. Two mechanisms of photocurrent amplification were observed. In structures with binary injection in the diffusion approximation amplification is caused by a change in the lifetime with the level of dark carrier injection. In structures with drift transport, amplification is caused by a “transit” effect. In both cases, the trapping levels play an important role.
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