G. N. Talalakin

5 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Distribution of Defects in InAs<sub>1-x-y</sub>Sb<sub>x</sub>P<sub>y</sub>-InAs DHs

   T. S. Argunova, R. N. Kyutt, B. A. Matveev +3

   ArticleAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 citations

   ABIABI:AkademIndex/openalex/1991.article.000041

2. Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

   N. V. Zotova, S. A. Karandashev, B. A. Matveev +3

   ArticleAdvanced Optical Sensing TechnologiesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000209

3. Fiber-optic detector using a mid-infrared diode laser and an acoustooptic modulator

   N. V. Zotova, S. A. Karandashev, L. A. Kulakova +4

   ArticlePhotonic and Optical DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000213

4. Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000120

5. Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   ArticleSpectroscopy and Laser ApplicationsTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000255