Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy
M. AidaralievA. F. Ioffe Physicotechnical Institute, St. PetersburgN. V. ZotovaA. F. Ioffe Physicotechnical Institute, St. PetersburgS. A. KarandashevA. F. Ioffe Physicotechnical Institute, St. PetersburgB. A. MatveevA. F. Ioffe Physicotechnical Institute, St. PetersburgM. A. RemennyĭA. F. Ioffe Physicotechnical Institute, St. PetersburgN. M. Stus’A. F. Ioffe Physicotechnical Institute, St. Petersburg,G. N. TalalakinA. F. Ioffe Physicotechnical Institute, St. Petersburg
ABI
Abstract
Graded-index p-n InAsSb/InAsSbP/InAs structures capable of emitting at the maximum of the spectral curve up to 5.4 μm with a half-width of ∼26 meV (∼0.6 μm) without cooling have been fabricated and studied. This is the longest-wavelength radiation obtained at room temperature in III–V structures grown by liquid-phase epitaxy and the band is the narrowest obtained for semiconductor spontaneous radiation sources.
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