E. F. Venger

3 works

Institute of Semiconductor Physics (Ukraine)

1. <title>Molecular-beam epitaxial growth of CdZnTe/ZnTe QW structures and superlattices on GaAs (100) substrates for optoelectronics</title>

   E. F. Venger, Yu. G. Sadof’ev, Galina N. Semenova +6

   ArticleAdvanced Semiconductor Detectors and MaterialsProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE19990 citations

   ABIABI:AkademIndex/openalex/1999.article.000168

2. <title>Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE</title>

   E. F. Venger, Yu. G. Sadof’ev, Galina N. Semenova +7

   ArticleAdvanced Semiconductor Detectors and MaterialsProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE19990 citations

   ABIABI:AkademIndex/openalex/1999.article.000170

3. <title>Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs</title>

   E. F. Venger, Galina N. Semenova, Yevgen Y. Braylovsky +6

   ArticleAdvanced Semiconductor Detectors and MaterialsProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20030 citations

   ABIABI:AkademIndex/openalex/2003.article.000288