V. M. Ardyshev

1 works

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, pl. Revolyutsii 1, Tomsk, 634050, Russia

1. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

   V. M. Ardyshev, M. V. Ardyshev

   ArticleSemiconductor materials and interfacesSemiconductors20020 citations

   ABIABI:AkademIndex/openalex/2002.article.000046