M. Ya. Valakh

1 works

V. Lashkaryov Institute of Semiconductor

1. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

   Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

   ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 citations

   ABIABI:AkademIndex/openalex/2004.article.000056