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AkademBaseOpen API for the ecosystem

Jean-Pierre Chante

1 works

INSA Lyon

  1. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

    Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 citations
    ABI