Sh.S. Daliev

2 works

Institute of Applied Physics, National University of Uzbekistan, Tashkent, Uzbekistan

1. Influence of thermal treatment on characteristics of silicon doped by lanthanium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 citations

   ABIABI:AkademIndex/openalex/2006.article.000426

2. Studying influence of titanium and hafnium atoms on characteristics of volume and Si-SiO 2 interface of multilayer structures

   С. И. Власов, Sh.S. Daliev

   ArticleAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali20110 citations

   ABIABI:AkademIndex/openalex/2011.article.000538