Vyacheslav N. Giryansky

1 works

Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan

1. Influence of Defects on Low Temperature Diffusion of Boron in SiC

   I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

   ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 citations

   ABIABI:AkademIndex/openalex/2026.other.390730