Mahkam Halillaev

1 works

Department of Physics, Urganch State University, Urganch, Uzbekistan

1. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   ChapterSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 citations

   ABIABI:AkademIndex/openalex/2013.chapter.000013