Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem

Ehsan Elahi

8 works

Department of Physics and Astronomy, Graphene Research Institute, Sejong University, Seoul 05006, Korea

  1. Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

    Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8

    ArticleGraphene research and applicationsACS Applied Electronic Materials20236 citations
    ABI

  2. Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials

    Muhammad Abubakr, Ehsan Elahi, Shania Rehman +10

    Article2D Materials and ApplicationsMaterials Today Physics20233 citations
    ABI

  3. Recent innovations in 2D magnetic materials and their potential applications in the modern era

    Ehsan Elahi, Muhammad Asghar Khan, Muhammad Suleman +8

    Article2D Materials and ApplicationsMaterials Today20231 citations
    ABI

  4. Revealing Bipolar Photoresponse in Multiheterostructured WTe<sub>2</sub>–GaTe/ReSe<sub>2</sub>–WTe<sub>2</sub> P–N Diode by Hybrid 2D Contact Engineering

    Ehsan Elahi, Muhammad Rabeel, Bilal Ahmed +11

    Article2D Materials and ApplicationsACS Applied Materials & Interfaces20241 citations
    ABI

  5. Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures

    Ehsan Elahi, Sobia Nisar, Muhammad Rabeel +7

    Article2D Materials and ApplicationsMaterials Advances20231 citations
    ABI

  6. Enhanced near infrared and gate tunable photoresponse of MoSe2 transistor enabled by 2D hetero contact engineering

    Ehsan Elahi, Muhammad Rabeel, Shania Rehman +8

    Article2D Materials and ApplicationsOptical Materials20241 citations
    ABI

  7. Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices

    Muhammad Hamza Pervez, Ehsan Elahi, Muhammad Asghar Khan +8

    ArticleAdvanced Memory and Neural ComputingSmall Structures20240 citations
    ABI

  8. UV to NIR photodetection in lateral homojunction PN diode of WSe<sub>2</sub> achieved <i>via</i> IGZO sputtering

    Muhammad Abubakr, Muhammad Hamza Pervez, Arslan Rehmat +11

    Article2D Materials and ApplicationsJournal of Materials Chemistry C20250 citations
    ABI