Bakhodir B. Bokiyev

1 works

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Structural Features of Silicon with Tin Impurity

   Sharifa B. Utamuradova, Bakhodir B. Bokiyev, D. S. Pulatova

   ArticleSemiconductor materials and interfacesEast European Journal of Physics20240 citations

   ABIABI:AkademIndex/openalex/2024.article.003699