Article

Parametric Instability and Resonance Effects in Semiconductors

P. M. Karageorgy‐AlkalaevInstitute of Technical Physics, Academy of Sciences of the Uzbek SSR, TashkentA. Yu. LeĭdermanInstitute of Technical Physics, Academy of Sciences of the Uzbek SSR, Tashkent

physica status solidi (b)journal1970en

ABI

Abstract

Abstract The possibility of distortion of stable distributions of non‐equilibrium carriers in semiconductors (dielectrics) due to the dependence of dielectric permittivity and mobility on the electric field strength or filling rate of impurity centres is considered. It is shown that a semiconductor possesses resonance properties in the self‐oscillation regime.

Topics

Advanced Research in Systems and Signal Processing

Identifiers

DOI: 10.1002/pssb.19700400107

Citations and references

Cited by 09 references

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