On the Theory of Photoconductivity and Photoelectromagnetic Effect at High Concentrations of Non‐Equilibrium Charge Carriers
D. A. AronovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentV. ZaitovaS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentE. P. KotovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent
ABI
Abstract
Abstract In this paper, the theory of photoconductivity (PC) and photoelectromagnetic (PEM) effect is developed for arbitrary injection levels taking into account the trapping of non‐equilibrium carriers. On the basis of the calculations performed, the conclusion is drawn that it is possible to determine the lifetimes and capture cross‐sections of electrons and holes as well as the concentration of traps from measurements of PC and PEM effects at low and high illumination levels.
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