Chapter

Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon

O. A. KlimkovaNuclear Physics Institute, Academy of Sciences of the Uzbek SSR, Tashkent, UzbekistanO. R. NiyazovaNuclear Physics Institute, Academy of Sciences of the Uzbek SSR, Tashkent, Uzbekistan

1971en

ABI

Abstract

No abstract available.

Topics

Pulsed Power Technology Applications Semiconductor materials and interfaces Silicon Carbide Semiconductor Technologies

Identifiers

DOI: 10.1007/978-1-4757-1232-2_62

Citations and references

Cited by 04 references

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